Properties of truly bulk GaN monocrystals grown by ammonothermal method

被引：18
作者：
Dwilinski, Robert [1 ]
Doradzinski, Roman [1 ]
Garczynski, Jerzy [1 ]
Sierzputowski, Leszek [1 ]
Kucharski, Robert [1 ]
Rudzinski, Mariusz [2 ]
Zajac, Marcin [1 ]
Kudrawiec, Robert [3 ]
机构：
[1] AMMONO, Czerwonego Krzyta 2-31, PL-00377 Warsaw, Poland
[2] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
[3] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12 | 2009年 / 6卷 / 12期
关键词：
PRESSURE; LAYERS; PLANE; HVPE;
D O I：
10.1002/pssc.200982582
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We are presenting some physical and chemical basis of ammonothermal method of bulk gallium nitride synthesis in ammonobasic route. Excellent structural and wide spectrum of electrical parameters of truly bulk GaN crystals obtained in this way are revealed. In considered crystals a low dislocation density (5 x 10(3) cm(-2)) is attainable. At the same time the crystal lattice is extremely flat and the (0002) rocking curve is very narrow (FWHM=16 arcsec). Both polar and nonpolar ammonothermal GaN substrates enabled to grow high optical quality, strain-free homoepitaxial layers. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2661 / +
页数：2
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