Highly strained InAs quantum wells on InP substrates for mid-IR emission

被引：6
作者：
Kim, Sangho [1 ]
Kirch, Jeremy [1 ]
Mawst, Luke [1 ]
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 08期
关键词：
High-resolution X-ray diffraction; Strain; Organometallic vapor phase epitaxy; InAs; TBA; Semiconductor III-V materials; DISTRIBUTED-FEEDBACK LASERS; OUTPUT POWER; GROWTH; MOVPE;
D O I：
10.1016/j.jcrysgro.2009.12.003
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Optical emission characteristics of indium arsenide (InAs) quantum wells were studied using organometallic vapor phase epitaxy (OMVPE). Low growth temperature (<500 degrees C) and tertiarybutylarsine (TBA) and/or arsine precursors were applied for this study. Several growth parameters such as growth temperature, growth rate, interruption time between growths of layers, and mixture of group V precursors were investigated. It was found that relatively high growth rate of InAs (0.3 nm/s) and a mixture flow of TBA and AsH3, allowed growth of up to 9 nm thick InAs quantum wells without significant strain relaxation. Photoluminescence (PL) wavelengths of 2.52 mu m were observed at room temperature (RI) from a 9 nm InAs double quantum well (DQW) in a separate confinement heterostructure (SCH) structure. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1388 / 1390
页数：3
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