Observation of crystallization process from amorphous Bi4Ti3O12 prepared by rapid quenching method

被引:15
作者
Takashige, M
Hamazaki, S
Takhashi, Y
Shimizau, F
Yamaguchi, T
Jang, MS
Kojima, S
机构
[1] Iwaki Meisei Univ, Dept Elect, Iwaki, Fukushima 9708551, Japan
[2] Iwaki Meisei Univ, Dept Elect Engn, Hino, Tokyo 1918506, Japan
[3] Pusan Natl Univ, Res Ctr Dielect & Adv Matter Phys, Pusan 609735, South Korea
[4] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 3058573, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 9B期
关键词
amorphous; rapid quenching; Bi4Ti3O12; crystallization; atomic force microscope; AFM;
D O I
10.1143/JJAP.39.5716
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied the crystallization of amorphous samples of Bi4Ti3O12 prepared by rapid quenching. Differential thermal analysis, powder X-ray diffraction and Raman spectral measurements revealed that the amorphous sample first crystallizes at approximately 610 degreesC to a metastable Bi2Ti2O7 phase and then transforms irreversibly to the stable Bi4Ti3O12 phase at approximately 830 degreesC.
引用
收藏
页码:5716 / 5718
页数:3
相关论文
共 8 条
[1]   ANOMALOUS DIELECTRIC BEHAVIOR AND REVERSIBLE PYROELECTRICITY IN ROLLER-QUENCHED LINBO3 AND LITAO3 GLASS [J].
GLASS, AM ;
LINES, ME ;
NASSAU, K ;
SHIEVER, JW .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :249-251
[2]   CRYSTALLIZING PROCESS OF AMORPHOUS THICK-FILMS OF FERROELECTRIC LEAD GERMANATE FAMILY [J].
HATANO, J ;
MUKAIGAWA, T ;
UEHARA, H ;
GRUVERMAN, A ;
TAKAHASHI, K ;
YUKINO, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5521-5524
[3]  
Jang MS, 1995, J KOREAN PHYS SOC, V28, pS605
[4]   RAMAN-SCATTERING STUDY OF BISMUTH LAYER-STRUCTURE FERROELECTRICS [J].
KOJIMA, S ;
IMAIZUMI, R ;
HAMAZAKI, S ;
TAKASHIGE, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9B) :5559-5564
[5]  
Takahashi K., 1985, Japanese Journal of Applied Physics, Supplement, V24, P616
[6]   CRYSTALLIZATION PROCESS FROM AMORPHOUS PBTIO3 [J].
TAKASHIGE, M ;
NAKAMURA, T ;
OZAWA, H ;
UNO, R ;
TSUYA, N ;
ARAI, KI .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L255-L258
[7]   Observation of the crystallization process from amorphous PbTiO3 and Pb5Ge3O11 by atomic force microscopy [J].
Takashige, M ;
Hamazaki, S ;
Fukurai, N ;
Tashiro, N ;
Shimizu, F ;
Kojima, T ;
Hatano, J ;
Jang, MS ;
Takahashi, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B) :6150-6154
[8]   Phase and microstructural evolution during the interaction between bismuth oxide films and Pt/Ti/SiO2/Si substrates [J].
Wen, CY ;
Lu, CH .
FERROELECTRICS LETTERS SECTION, 1999, 26 (5-6) :125-135