Hydrogenic donor impurity in parallel-triangular quantum wires: Hydrostatic pressure and applied electric field effects

被引：10
作者：
Restrepo, R. L. [2 ]
GiraldoA, E. [2 ]
Miranda, G. L. [2 ]
Ospina, W. [2 ]
Duque, C. A. [1 ]
机构：
[1] Univ Antioquia, Inst Fis, Medellin 1226, Colombia
[2] Escuela Ingn Antioquia, Medellin 7516, Colombia
来源：
PHYSICA B-CONDENSED MATTER | 2009年 / 404卷 / 23-24期
关键词：
Multiple quantum-well wires; Donor impurity; Electric field; Hydrostatic pressure; PHOTOIONIZATION CROSS-SECTION; BINDING-ENERGY; WELL; STATES;
D O I：
10.1016/j.physb.2009.08.282
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The combined effects of the hydrostatic pressure and in-growth direction applied electric field on the binding energy of hydrogenic shallow-donor impurity states in parallel-coupled-GaAs-Ga1-xAlxAs-quantum-well wires are calculated using a variational procedure within the effective-mass and parabolic-band approximations. Results are obtained for several dimensions of the structure, shallow-donor impurity positions, hydrostatic pressure, and applied electric field. Our results suggest that external inputs such us hydrostatic pressure and in-growth direction electric field are two useful tools in order to modify the binding energy of a donor impurity in parallel-coupled-quantum-well wires. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：5163 / 5166
页数：4
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