Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films

被引：4

作者：

Bari, R. H.

Patil, L. A. ^{[1
]}

Soni, A.

Okram, G. S.

机构：

[1] Pratap Coll, PG Dept Phys, Amalner 425401, India

[2] UGC DAE Consortium Sci Res, Indore 452001, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2007年 / 30卷 / 02期

关键词：

CuIn(S; Se)(2); thin films; chemical bath deposition technique; d.c; conductivity; thermoelectric power; SOLUTION GROWTH TECHNIQUE; BATH DEPOSITION;

D O I：

10.1007/s12034-007-0024-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)(2)] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1 center dot 87-12 center dot 15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)(2) was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of serniconductivity was ascertained.

引用

页码：135 / 139

页数：5

共 13 条

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