Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements

被引：16

作者：

Fujita, Eigo ^{[1
]}

Sometani, Mitsuru ^{[2
]}

Hatakeyama, Tetsuo ^{[2
]}

Harada, Shinsuke ^{[2
]}

Yano, Hiroshi ^{[3
]}

Hosoi, Takuji ^{[1
]}

Shimura, Takayoshi ^{[1
]}

Watanabe, Heiji ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

来源：

AIP ADVANCES | 2018年 / 8卷 / 08期

关键词：

OXIDATION; INTERFACE; DENSITY;

D O I：

10.1063/1.5034048

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (mu(FE)) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe mu(FE) degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces. (C) 2018 Author(s).

引用

页数：6

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