Effect of Energy Level of Hole-Blocking Layer on the Electroluminescence Characteristics of Highly Soluble Ir(III) Complex based Phosphorescent Organic Light-Emitting Diodes

被引：0

作者：

Park, Young Wook ^{[1
]}

Kim, Young Min ^{[1
]}

Choi, Jin Hwan ^{[1
]}

Park, Tae Hyun ^{[1
]}

Jung, Jin Wook ^{[1
]}

Ju, Byeong Kwon ^{[1
]}

Cho, Min Ju ^{[2
]}

Choi, Dong Hoon ^{[2
]}

机构：

[1] Korea Univ, Display & Nanosyst Lab, Coll Engn, Seoul 136713, South Korea

[2] Korea Univ, Dept Chem, Adv Mat Chem Res Ctr, Seoul 136713, South Korea

来源：

2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - III | 2009年

关键词：

ELECTROPHOSPHORESCENT DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this report, we've demonstrated the highly efficient electroluminescence (EL) of highly soluble Iridium(III) tris(9-(6-Phenyl pyridin-3-ylmethyl)-9H-Carbazole) based polymer light-emitting diodes utilizing balanced carrier distribution and exciton confinement by controlling energy level of hole blocking layer. By applying wide band gap hole-blocking material of 3-(4-biphenylyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole, the EL efficiency was remarkably improved than with the 2, 9-dimethyl-4,7-diphenyl-1,10 phenanthroline.

引用

页码：1740 / +

页数：2

共 12 条

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