Shunt removal and patching for crystalline silicon solar cells using infrared imaging and laser cutting

被引：12

作者：

Zhang, Lucheng ^{[1
]}

Shen, Hui ^{[1
]}

Yang, Zhuojian ^{[1
]}

Jin, Jingsheng ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Inst Solar Energy Syst, Guangzhou 510275, Guangdong, Peoples R China

来源：

PROGRESS IN PHOTOVOLTAICS | 2010年 / 18卷 / 01期

关键词：

shunt; remove; patch;

D O I：

10.1002/pip.934

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Shunts in crystalline silicon solar cells can be physically removed and replaced with good cells to eliminate their influences, which is proved by the experiments in this paper. By infrared imaging and laser cutting, the shunted regions near the edges of cell A and in the middle of cell B were identified and removed with their efficiencies increased by 6.8% and 3.0%, respectively. After shunt removal, cell B was patched up with good cells and its final work current further increased from 3.71 to 4.11 A. The result implies that this work could improve the output power and current matching in a module for the repaired cell. Copyright (C) 2009 John Wiley & Sons, Ltd.

引用

页码：54 / 60

页数：7

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