A systematic investigation of the effect of the material and the structural parameters on the hole states in strained p-Si/Si1-xGex/p-Si selectively doped double heterojunctions structures

The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si1-xGex/p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the Schrodinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulation parameters involved, i.e. the well width, the spacer thickness and the doping concentration, for x = 0.2. We give physical interpretations of the interesting characteristics observed. Our results are in very good agreement with experiment. (C) 1997 Academic Press Limited.