Design of a 420GHz GaAs Monolithic Integrated Sub-Harmonic Mixer

被引：0

作者：

Liu, Ge ^{[1
,2
]}

Zhang, Bo ^{[1
,2
]}

Fan, Yong ^{[1
]}

Zhang, Lisen ^{[2
]}

Xing, Dong ^{[2
]}

Wang, Junlong ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Sichuan, Peoples R China

[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuits, Shijiazhuang 050000, Peoples R China

来源：

PROCEEDINGS OF 2016 IEEE 9TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT) | 2016年

基金：

中国国家自然科学基金;

关键词：

sub-harmonic mixer; schottky diode; monolithic; GaAs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a 420GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. We combine the diode 3D model, nonlinear model and passive circuit by field-circuit method, then optimize the circuit through harmonic balanced method, finally study the GaAs monolithic integrated 420GHz sub-harmonic mixer. Simulated results for the mixer achieved DSB conversion loss of 7.161dB at 420.4GHz when the LO pumped power was 6dBm at 210GHz. The conversion loss was less than 9dB from 384GHz to 4.51GHz.

引用

页码：84 / 85

页数：2

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