Towards nanomemories: Ge growth on naturally and artificially nanostructured Si surfaces

被引：0
|
作者：
Sgarlata, Anna [1 ]
Balzarotti, Adalberto [1 ]
Berbezier, Isabelle [2 ]
Szkutnik, Pierre [2 ]
Rosei, Federico [3 ]
Motta, Nunzio [4 ]
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, Via Ric Sci 1, I-00173 Rome, Italy
[2] IMT Technopole chateau Gombert, Dpt Microelectron & Telecommun, L2MP Polytech, F-13451 Marseille, France
[3] Univ Quebec, INRS Energie, Varennes, PQ J3X 1S2, Canada
[4] Queensland Univ Technol, Sch Engn Syst, Brisbane, Qld 4001, Australia
来源：
2006 INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY, VOLS 1 AND 2 | 2006年
关键词：
quantum dots; nanopatterning; epilaxial growth;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
Quantum dots (QDs) grown on semiconductors surfaces are actually the main researchers' interest for applications in the forecoming nanotechnology era like nanotransistors and nanomemories. Novel approaches to form ordered patterns of homogeneous nanostructures consist of natural patterning induced by surface instabilities, as step bunching of Si(111) or misoriented Si(001) surfaces, and of nanolithographic techniques, as Focused Ion Beam (FIB) or patterning by Scanning Tunneling Microscopy (STM). Based on the analysis of STM images and movies we report on growth and arrangement of Ge islands on nanopatterned silicon. Several issues are discussed: substrate nanostructuring using different techniques, wetting layer growth, transition up to 3D islands formation and arrangement of QDs to form nanomemories.
引用
收藏
页码：514 / +
页数：2
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