共 38 条
Highly enhanced in-field critical current density of MgB2 superconductor by combined addition of burned rice husk and nano Ho2O3
被引:6
作者:

Vinod, K.
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机构:
CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India

Varghese, Neson
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CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India

Sundaresan, A.
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机构:
Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India

Syamaprasad, U.
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CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India
机构:
[1] CSIR, Natl Inst Interdisciplinary Sci & Technol, Trivandrum 695019, Kerala, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
关键词:
MgB2;
superconductor;
Chemical aadition;
Flux pinning;
Critical current density;
IRREVERSIBILITY FIELD;
SILICON-CARBIDE;
CARBON;
D O I:
10.1016/j.solidstatesciences.2010.01.012
中图分类号:
O61 [无机化学];
学科分类号:
070301 ;
081704 ;
摘要:
With the aim of improving flux pinning and in-field critical current density [J(C)(H)], two physically and chemically different additives - burned rice husk (BRH) and nano Ho2O3 were introduced into in situ MgB2 superconductor. The effects of the above two additives were studied individually and combinedly. Ho2O3 decomposed and reacted with B to form HoB4, without any substitution. BRH caused considerable amount of C substitution at B site and formed Mg2Si and Mg2C3 secondary phases. Addition of Ho2O3 improved the J(C)(H) only marginally, but BRH improved the J(C)(H) strongly. Combined addition of Ho2O3 with BRH was found to be much more effective than their solo addition for the enhancement of J(C)(H) of MgB2. (C) 2010 Elsevier Masson SAS. All rights reserved.
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收藏
页码:610 / 616
页数:7
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