Silicon Carbide Diffusion Bonding by Spark Plasma Sintering

被引：24

作者：

Aroshas, Ron ^{[1
]}

Rosenthal, Idan ^{[1
]}

Stern, Adin ^{[1
]}

Shmul, Zvia ^{[2
]}

Kalabukhov, Sergei ^{[1
]}

Frage, Nachum ^{[1
]}

机构：

[1] Ben Gurion Univ Negev, IL-8410501 Beer Sheva, Israel

[2] SNRC, Yavne, Israel

来源：

MATERIALS AND MANUFACTURING PROCESSES | 2015年 / 30卷 / 01期

关键词：

Nanoindentation; Silicon carbide; Nondestructive; Microscopy; Sintering; Joining; MECHANICAL-PROPERTIES; ELASTIC-MODULUS; MICROSTRUCTURE; COMPOSITES; HARDNESS;

D O I：

10.1080/10426914.2014.952019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work reports results of silicon carbide plates, disks, pipes, and pipe-disk couples bonded by a spark plasma sintering apparatus. The joining was conducted at 1900 degrees C for 30min with a 35MPa uniaxial pressure. The samples were analyzed by Scanning acoustic microscopy, which in turn revealed a low amount of small defects at the samples' periphery. Scanning acoustic microscopy results were verified through scanning electron microscopy and nanoindentation. It was concluded that Spark Plasma Sintering technique may serve as a valid and effective tool for diffusion bonding of high-temperature-resistant silicon carbide with different geometries.

引用

页码：122 / 126

页数：5

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