Effects of annealing on photoluminescence of ZnO thin film prepared by vapor phase growth

被引：32

作者：

Chen, J ^{[1
]}

Fujita, T ^{[1
]}

机构：

[1] Hiroshima Univ, Dept Appl Phys, Grad Sch Engn, Higashihiroshima, Hiroshima 7398527, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2003年 / 42卷 / 2A期

关键词：

ZnO; exciton; annealing; photoluminescence;

D O I：

10.1143/JJAP.42.602

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, we investigated the effects of annealing on the UV photoluminescence of ZnO films deposited on (0001) sapphire substrates by vapor phase growth. Before annealing, bound exciton lines dominate the band-edge emission at low excitation densities. However, at high excitation densities, free A- and B-exciton emissions are observed due to the saturation of bound exciton emissions. Annealing at 700 C in an oxygen atmosphere greatly affects the band-edge emissions. The free exciton emissions are significantly enhanced and become dominant, while the bound exciton emissions decrease notably after annealing. In addition, two emissions located at 3.306 and 3.220 eV are observed in the as-grown ZnO films. These are likely to be due to a donor-acceptor pair recombination and a localized exciton.

引用

页码：602 / 606

页数：5

共 26 条

[1] Electrical characterization of vapor-phase-grown single-crystal ZnO [J].

Auret, FD ;

Goodman, SA ;

Legodi, MJ ;

Meyer, WE ;

Look, DC .

APPLIED PHYSICS LETTERS, 2002, 80 (08) :1340-1342

[2] Effects of post-annealing treatment on the light emission properties of ZnO thin films on Si [J].

Bae, SH ;

Lee, SY ;

Kim, HY ;

Im, S .

OPTICAL MATERIALS, 2001, 17 (1-2) :327-330

[3] High temperature excitonic stimulated emission from ZnO epitaxial layers [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040

[4] Photoluminescence of localized excitons in pulsed-laser-deposited GaN [J].

Cazzanelli, M ;

Cole, D ;

Donegan, JF ;

Lunney, JG ;

Middleton, PG ;

O'Donnell, KP ;

Vinegoni, C ;

Pavesi, L .

APPLIED PHYSICS LETTERS, 1998, 73 (23) :3390-3392

[5] BULK ELECTRON TRAPS IN ZINC-OXIDE VARISTORS [J].

CORDARO, JF ;

SHIM, Y ;

MAY, JE .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (12) :4186-4190

[6] Luminescence and nonradiative deactivation of excited states involving oxygen defect centers in polycrystalline ZnO [J].

Egelhaaf, HJ ;

Oelkrug, D .

JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) :190-194

[7] Production of nitrogen acceptors in ZnO by thermal annealing [J].

Garces, NY ;

Giles, NC ;

Halliburton, LE ;

Cantwell, G ;

Eason, DB ;

Reynolds, DC ;

Look, DC .

APPLIED PHYSICS LETTERS, 2002, 80 (08) :1334-1336

[8] Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01(1)over-bar2) sapphire by metalorganic chemical vapor deposition [J].

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Mayo, WE ;

Lu, Y ;

Wraback, M ;

Shen, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2595-2602

[9] Violet and UV luminescence emitted from ZnO thin films grown on sapphire by pulsed laser deposition [J].

Jin, BJ ;

Im, S ;

Lee, SY .

THIN SOLID FILMS, 2000, 366 (1-2) :107-110

[10] Structural, electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering [J].

Kim, KH ;

Park, KC ;

Ma, DY .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) :7764-7772

← 1 2 3 →