共 45 条
Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition
被引:10
作者:

Ji, Xianghai
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Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Yang, Xiaoguang
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Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Yang, Tao
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Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
机构:
[1] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
来源:
NANOSCALE RESEARCH LETTERS
|
2017年
/
12卷
基金:
中国国家自然科学基金;
关键词:
Heterostructure nanowire;
InAs/GaSb;
Self catalyzed;
Crystal structure;
Metal organic chemical vapor deposition;
MOLECULAR-BEAM EPITAXY;
CORE-SHELL NANOWIRES;
HETEROSTRUCTURE NANOWIRES;
SI;
SILICON;
TRANSISTORS;
TEMPERATURE;
TRANSPORT;
DENSITY;
D O I:
10.1186/s11671-017-2207-5
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa) and trimethylantimony (TMSb) are used. We first use relatively low TMGa and TMSb flow rates to preserve the Ga droplets on the thin InAs stems. Then, the flow rates of TMGa and TMSb are increased to enhance the axial growth rate. Because of the slower radial growth rate of GaSb at higher growth temperature, GaSb nanowires grown at 500 degrees C exhibit larger diameters than those grown at 520 degrees C. However, with respect to the axial growth, due to the Gibbs-Thomson effect and the reduction in the droplet supersaturation with increasing growth temperature, GaSb nanowires grown at 500 degrees C are longer than those grown at 520 degrees C. Detailed transmission electron microscopy (TEM) analyses reveal that the GaSb nanowires have a perfect zinc-blende (ZB) crystal structure. The growth method presented here may be suitable for other antimonide nanowire growth, and the axial InAs/GaSb heterostructure nanowires may have strong potential for use in the fabrication of novel nanowire-based devices and in the study of fundamental quantum physics.
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页数:8
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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China

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Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China

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