InN Nanowires Based Near-Infrared Broadband Optical Detector

被引：6

作者：

Dwivedi, Shyam Murli Manohar Dhar ^{[1
]}

Dalal, Avijit ^{[1
]}

Ghosh, Anupam ^{[1
]}

Murkute, Punam ^{[2
]}

Ghadi, Hemant ^{[3
]}

Ghosh, Chiranjib ^{[1
]}

Chakrabarti, Subhananda ^{[4
]}

Bhunia, Satyaban ^{[5
]}

Mondal, Aniruddha ^{[1
]}

机构：

[1] Natl Inst Technol Durgapur, Dept Phys, Durgapur 713209, India

[2] Indian Inst Technol, Ctr Res Nanotechnol & Sci, Mumbai 400076, Maharashtra, India

[3] Ohio State Univ, Elect & Comp Engn Dept, Columbus, OH 43210 USA

[4] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India

[5] Saha Inst Nucl Phys, Surface Phys & Mat Sci Div, Kolkata 700064, India

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2019年 / 31卷 / 18期

关键词：

Photodetector; InN; nanowire; GLAD; near-infrared; ZONE MODEL; FILMS; PHOTODETECTOR; ENERGY;

D O I：

10.1109/LPT.2019.2936272

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have reported a new method of synthesis of InN nanowires (NWs) on p-Si (100) substrate by the vapour transport cum glancing angle deposition (GLAD) technique. The field emission gun transmission electron microscopy (FEG-TEM) reveals that the InN NWs are crystalline in nature. Photoluminescence (PL) analysis shows that the optical bandgap of the NW is similar to 1.07 eV at 300 K. Metal-Semiconductor-Metal (M-S-M) photodetecor has been fabricated using InN NWs. The device produced trivial dark current similar to 7.31 mu A cm(-2) at 3 V applied voltage. The broad band near-infrared (NIR) photo-response from 900-1400 nm was recorded for the device.

引用

页码：1526 / 1529

页数：4

共 31 条

[1] Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures [J].