Effect of Non-Local Growth Dynamics on Magnetic Properties of Composition-Graded Ga1-xMnxAs1-yPy Ferromagnetic Films

被引:3
作者
Bac, S-K [1 ,2 ]
Liu, X. [2 ]
Dobrowolska, M. [2 ]
Lee, S. [1 ]
Furdyna, J. K. [2 ]
机构
[1] Korea Univ, Dept Phys, Seoul 02841, South Korea
[2] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
基金
美国国家科学基金会; 新加坡国家研究基金会;
关键词
ferromagnetic semiconductors; magnetic anisotropy; semiconductor alloys with graded composition; epitaxial growth dynamics; CURIE-TEMPERATURE; SEMICONDUCTORS; GAAS;
D O I
10.12693/APhysPolA.141.149
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We discuss the magnetic properties of Ga1-xMnxAs1-yPy films with phosphorus content y graded along the growth direction from y = 0.03 to y approximate to 0:25. Such grading was achieved by growing the film epitaxially in the form of sublayers with successively increasing values of y. X-ray measurements reveal that the strain in the film changes coherently with increasing phosphorus content, from in-plane compressive at the bottom to in-plane tensile in the upper sublayers of the graded film. The grading of strain arising from the changing composition results in gradual changes of magnetic anisotropy from in-plane in the lower sublayers to out-of-plane as we progress toward the top. Magnetization measurements reveal that the graded film is composed of three regions with different magnetic anisotropies: one with a strong in-plane easy axis, one with a strong out-of-plane easy axis, and in between a region with both in-plane and out-of-plane easy axes. The contribution of the region with an in-plane easy axis to the total magnetization of the film was found to be strongly dominant. This result is quite unexpected, because approximate to 75% of the graded film consists of sublayers under tensile strain, where out-of-plane magnetic anisotropy is expected to dominate. These surprising results arise from effects occurring in epitaxial growth of such graded structures, where properties of a layer being deposited are determined not only by growth conditions at the moment of deposition but also by the presence of layers grown earlier and by deposition of additional layers grown later. This form of growth can be explained in terms of band structure at different locations of the multilayer as the growth proceeds, and we will therefore refer to it as non-local growth.
引用
收藏
页码:149 / 155
页数:7
相关论文
共 27 条
  • [1] Magnetic anisotropy of ferromagnetic Ga1-xMnxAs1-yPy films with graded composition
    Bac, Seul-Ki
    Lee, Sanghoon
    Liu, Xinyu
    Dobrowolska, Malgorzata
    Assaf, Badih A.
    Furdyna, Jacek K.
    [J]. PHYSICAL REVIEW MATERIALS, 2021, 5 (05)
  • [2] Choi S., 2019, Scientific reports, V9, P1
  • [3] Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
    Dietl, T
    Ohno, H
    Matsukura, F
    [J]. PHYSICAL REVIEW B, 2001, 63 (19)
  • [4] Families of magnetic semiconductors - an overview
    Dietl, Tomasz
    Bonanni, Alberta
    Ohno, Hideo
    [J]. JOURNAL OF SEMICONDUCTORS, 2019, 40 (08)
  • [5] Dilute ferromagnetic semiconductors: Physics and spintronic structures
    Dietl, Tomasz
    Ohno, Hideo
    [J]. REVIEWS OF MODERN PHYSICS, 2014, 86 (01) : 187 - 251
  • [6] Programmable bias field observed in graded ferromagnetic semiconductor films with broken symmetry
    Dong, Sining
    Wang, Yong-Lei
    Bac, Seul-Ki
    Liu, Xinyu
    Vlasko-Vlasov, Vitalii
    Kwok, Wai-Kwong
    Rouvimov, Sergei
    Lee, Sanghoon
    Dobrowolska, Margaret
    Furdyna, Jacek K.
    [J]. PHYSICAL REVIEW MATERIALS, 2019, 3 (07)
  • [7] Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration
    Glunk, M.
    Daeubler, J.
    Dreher, L.
    Schwaiger, S.
    Schoch, W.
    Sauer, R.
    Limmer, W.
    Brandlmaier, A.
    Goennenwein, S. T. B.
    Bihler, C.
    Brandt, M. S.
    [J]. PHYSICAL REVIEW B, 2009, 79 (19)
  • [8] Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications
    Grassman, Tyler J.
    Brenner, Mark R.
    Gonzalez, Maria
    Carlin, Andrew M.
    Unocic, Raymond R.
    Dehoff, Ryan R.
    Mills, Michael J.
    Ringel, Steven A.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) : 3361 - 3369
  • [9] Mixed magnetic phases in (Ga,Mn)As epilayers
    Hamaya, K
    Taniyama, T
    Kitamoto, Y
    Fujii, T
    Yamazaki, Y
    [J]. PHYSICAL REVIEW LETTERS, 2005, 94 (14)
  • [10] (GaMn)As: GaAs-based III-V diluted magnetic semiconductors grown by molecular beam epitaxy
    Hayashi, T
    Tanaka, M
    Nishinaga, T
    Shimada, H
    Tsuchiya, H
    Otuka, Y
    [J]. JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 1063 - 1068