Atomic Layer Deposition and Performance of ZrO2-Al2O3 Thin Films

被引：12

作者：

Kukli, Kaupo ^{[1
,2
]}

Kemell, Marianna ^{[1
]}

Castan, Helena ^{[3
]}

Duenas, Salvador ^{[3
]}

Seemen, Helina ^{[2
]}

Rahn, Mihkel ^{[2
]}

Link, Joosep ^{[4
]}

Stern, Raivo ^{[4
]}

Heikkila, Mikko J. ^{[1
]}

Ritala, Mikko ^{[1
]}

Leskela, Markku ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland

[2] Univ Tartu, Inst Phys, EE-50411 Tartu, Estonia

[3] Univ Valladolid, Dept Elect, E-47011 Valladolid, Spain

[4] NICPB, EE-12618 Tallinn, Estonia

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2018年 / 7卷 / 05期

关键词：

ROOM-TEMPERATURE FERROMAGNETISM; ZRO2; NANOSTRUCTURES; RRAM DEVICES; ENCAPSULATION; CAPACITORS; EPITAXY; ALUMINA; GROWTH;

D O I：

10.1149/2.0021806jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin mixed and nanolaminate films of ZrO2 and Al2O3 were grown by atomic layer deposition from the corresponding metal chlorides and water. The films were grown at 350 degrees C in order to ensure ZrO2 crystallization in the as-deposited state. The relative thicknesses of layers in the structure of the nanolaminates were controlled in order to maximize the content of metastable polymorphs of ZrO2 that have higher permittivity than that of the stable monoclinic ZrO2 . The multilayer films demonstrated interfacial charge polarization and saturative magnetization in external fields. The conductivity of the films could be switched between high and low resistance states by applying voltages of alternating polarity. (C) 2018 The Electrochemical Society.

引用

收藏

页码：P287 / P294

页数：8

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