Modulation of bandgap and electrical conductivity in europium doped single ZnO nanorod device

被引：13
作者：
Sikdar, Mrinal K. [1 ]
Ghorai, Gurupada [1 ]
Senapati, Tapas R. [1 ]
Sahoo, Pratap K. [1 ,2 ]
机构：
[1] Natl Inst Sci Educ & Res Bhubaneswar, OCC Homi Bhabha Natl Inst, Sch Phys Sci, Bhubaneswar 752050, Odisha, India
[2] NISER Bhubaneswar, Ctr Interdisciplinary Sci CIS, HBNI, Bhubaneswar 752050, Odisha, India
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2022年 / 913卷
关键词：
ZnO; TCO; Burstein-Moss Effect; Nanorod device; Eu doping; Transport properties; Bandgap renormalization; FIELD-EFFECT TRANSISTOR; ZINC-OXIDE; IMPURITY CONDUCTION; FET BIOSENSOR; DEFECTS; LUMINESCENCE; DEPENDENCE; VACANCY; ARRAY;
D O I：
10.1016/j.jallcom.2022.165179
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We investigate the effect of europium doping on the optical properties and electrical conductivity of hydrothermally grown ZnO nanorods. The widening of optical bandgap with europium doping occurs because of the Burstein-Moss effect upto 0.8% and bandgap renormalization is observed at higher concentration. The temperature-dependent resistivity measurements of the individual nanorods reveal that the intrinsic electrical conductivity is a combination of thermally activated and nearest-neighbor hopping conduction processes at high and low-temperature regimes, respectively. We can successfully correlate that the modulation of carrier concentration in the defect D and D- bands can tune both bandgap and electron transport in Eu doped ZnO nanorods. (C) 2022 Elsevier B.V. All rights reserved.
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页数：8
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