Concentrated chloride-based epitaxial growth of 4H-SiC

被引：2
作者：
Henry, A. [1 ]
Leone, S. [1 ]
Andersson, S. [1 ]
Kordina, O. [1 ]
Janzen, E. [1 ]
机构：
[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
chloride-based CVD; concentrated growth; high growth rate; CHEMICAL-VAPOR-DEPOSITION; HOMOEPITAXIAL GROWTH; SILICON; LAYERS; PRECURSOR; QUALITY; CVD; 4H;
D O I：
10.4028/www.scientific.net/MSF.645-648.95
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
A chloride-based CVD process has been studied in concentrated growth conditions. A systematic study of different carrier flows and pressures has been done in order to get good quality epilayers on 8 degrees off and on-axis substrates while using very low carrier flows. Hydrogen chloride (HCl) was added to the standard gas mixture to keep a high growth rate and to get homo-polytypic growth on on-axis substrates. The carrier flow was reduced down to one order of magnitude less than under typical growth condition. By lowering the process pressure it was possible to reduce precursor depletion along the susceptor which improved the thickness uniformity to below 2% variation (sigma/mean) over a 2 '' diameter wafer.
引用
收藏
页码：95 / 98
页数：4
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