Epitaxial growth of manganese on silicon: Volmer-Weber growth on the Si(111) surface

被引：56

作者：

Evans, MMR ^{[1
]}

Glueckstein, JC ^{[1
]}

Nogami, J ^{[1
]}

机构：

[1] UNIV WISCONSIN,SURFACE STUDIES LAB,MILWAUKEE,WI 53201

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.53.4000

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mn forms islands with a root 3X root 3 reconstruction and a minimum thickness of 4 Angstrom on Si(111). When up to 4 ML Mn is deposited at room temperature and annealed, Mn displays a modified Volmer-Weber growth mode with root 3X root 3 islands surrounded by partially ordered silicon adatom arrangements similar to those of quenched Si(111). Mn deposited at an elevated temperature also forms root 3X root 3 islands, but the surrounding clean Si preserves the 7x7 arrangement. At coverages of Mn above 4 ML, the surface is almost completely covered with a root 3X root 3 overlayer.

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页码：4000 / 4004

页数：5

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