Effect of input power on crystal orientation and residual stress in AlN film deposited by dc sputtering

被引：55

作者：

Kusaka, K ^{[1
]}

Taniguchi, D ^{[1
]}

Hanabusa, T ^{[1
]}

Tominaga, K ^{[1
]}

机构：

[1] Univ Tokushima, Fac Engn, Tokushima 7708506, Japan

来源：

VACUUM | 2000年 / 59卷 / 2-3期

关键词：

aluminum nitride film; sputtering; residual stress; c-axis orientation;

D O I：

10.1016/S0042-207X(00)00351-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The crystal orientation and residual stress development in AIN films deposited by de planar magnetron sputtering on a glass substrate were investigated by atomic force microscopy (AFM) and X-ray diffraction. The microscopic surface morphology, the film thickness and the crystal orientation were investigated for at various input powers, The following results wen obtained: (1) the crystal grain size and the film thickness increased with increasing input power; (2) c-axis orientation was slightly good at high input power; (3) tensile residual stresses were obtained at low input power and large compressive stresses were obtained at high input powers of P = 154 and 180 W. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：806 / 813

页数：8

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