Analytical model of transient compressive stress evolution during growth of high diffusivity thin films on substrates

被引：5

作者：

Bhandakkar, Tanmay K. ^{[1
]}

Chason, Eric ^{[1
]}

Gao, Huajian ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

PHILOSOPHICAL MAGAZINE | 2010年 / 90卷 / 22期

基金：

美国国家科学基金会;

关键词：

thin films; analytical model; thin film stresses; grain boundary; diffusion; Volmer-Weber growth; GRAIN-BOUNDARY DIFFUSION; METAL-FILMS; POLYCRYSTALLINE; SURFACE; COALESCENCE; RELAXATION; MECHANISMS;

D O I：

10.1080/14786431003773007

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an analytical model of transient compressive stress evolution during growth of thin films with high surface and grain boundary diffusivities on substrates. The model provides a closed-form analytical solution which compares well with numerical analysis as well as recent experimental data on transient stress evolution during electrodeposition of Sn films on substrates.

引用

收藏

页码：3037 / 3048

页数：12

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