Nonlithographic Patterning and Metal-Assisted Chemical Etching for Manufacturing of Tunable Light-Emitting Silicon Nanowire Arrays

被引：192

作者：

Chern, Winston ^{[1
,3
]}

Hsu, Keng ^{[1
,4
]}

Chun, Ik Su ^{[1
,2
]}

de Azeredo, Bruno P. ^{[1
,4
]}

Ahmed, Numair ^{[1
,4
]}

Kim, Kyou-Hyun ^{[3
]}

Zuo, Jian-min ^{[3
]}

Fang, Nick ^{[1
,4
]}

Ferreira, Placid ^{[1
,4
]}

Li, Xiuling ^{[1
,2
,3
]}

机构：

[1] Univ Illinois, Ctr Nanoscale Chem Elect Mech Mfg Syst, Urbana, IL 61822 USA

[2] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61822 USA

[3] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61822 USA

[4] Univ Illinois, Dept Engn Sci & Mech, Urbana, IL 61822 USA

来源：

NANO LETTERS | 2010年 / 10卷 / 05期

基金：

美国国家科学基金会;

关键词：

Silicon nanowire; metal-assisted-chemical-etching (MacEtch); S4; light-emitting; sidewall roughness; BLUE; PHOTOLUMINESCENCE; LITHOGRAPHY; PERFORMANCE; FABRICATION; DIAMETER;

D O I：

10.1021/nl903841a

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Semiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemicaletching (MacEtch), to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion. Strong light emission in the entire visible and near infrared wavelength range at room temperature, tunable by etching condition, attributed to surface features, and enhanced by silver surface plasmon, is demonstrated.

引用

页码：1582 / 1588

页数：7

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