Dislocations in charge-ordered Pr0.5Ca0.5MnO3 epitaxial thin films prepared by a two-step growth technique

被引:5
作者
Zhu, Y. L. [1 ]
Wang, X. [1 ]
Zhuo, M. J. [1 ]
Zhang, Y. Q. [1 ]
Ma, X. L. [1 ]
机构
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110015, Peoples R China
基金
中国国家自然科学基金;
关键词
dislocations; transmission electron microscopy; thin films; perovskites; MISFIT RELAXATION MECHANISMS; MOIRE FRINGE CONTRAST; MAGNETIC-FIELD; DOMAIN CONFIGURATIONS; STRAIN; SRTIO3; INTERFACE; SUBSTRATE; IDENTIFICATION; ACCOMMODATION;
D O I
10.1080/09500831003662503
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Charge-ordered Pr0.5Ca0.5MnO3 (PCMO) thin films epitaxially grown on SrTiO3 (100) substrates were prepared by a two-step growth technique which resulted in a 10 nm thick first layer and a 70 nm thick main layer. The dislocations in the as-received films were investigated using conventional and high-resolution transmission electron microscopy. Pure-edge misfit dislocations with Burgers vectors a < 011 > and line directions < 100 > were found to be the major interfacial defects responsible for the full misfit relief in the PCMO films. These dislocations constitute a square grid of dislocation lines parallel to the PCMO/SrTiO3 interface. In contrast, two types of dislocations were identified within the first layer. One is of edge type with Burgers vectors a < 110 > and line directions < 001 >; the other, of screw type with Burgers vectors a < 110 > and line directions < 110 >. Cross-slip of the latter may contribute to the multiplication of misfit dislocations necessary for a total misfit relaxation. Few threading dislocations were observed in the main layer. The dislocation configurations in the films are discussed in detail.
引用
收藏
页码:323 / 336
页数:14
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