A 1.2-pJ/bit 16-Gb/s 60-GHz OOK Transmitter in 65-nm CMOS for Wireless Network-On-Chip

被引:65
作者
Yu, Xinmin [1 ]
Sah, Suman Prasad [1 ]
Rashtian, Hooman [2 ]
Mirabbasi, Shahriar [3 ]
Pande, Partha Pratim [1 ]
Heo, Deukhyoun [1 ]
机构
[1] Washington State Univ, Sch Elect Engn & Comp Sci, Pullman, WA 99163 USA
[2] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
[3] Univ British Columbia, Dept Elect & Comp Engn, Vancouver, BC V6T 1Z4, Canada
基金
美国国家科学基金会;
关键词
Bulk driven; CMOS; drive amplifier (DA); low power; millimeter wave; modulator; neutralization; on-off keying (OOK); transmitter (TX); voltage-controlled oscillator (VCO); wireless network-on-chip (WiNoC); LOW-NOISE AMPLIFIER; DESIGN;
D O I
10.1109/TMTT.2014.2347919
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a high-efficiency 60-GHz on-off keying (OOK) transmitter (TX) designed for wireless network-on-chip applications. Aiming at an intra-chip communication distance of 20 mm, the TX consists of a drive amplifier (DA), a high-speed OOK modulator, and a transformer-coupled voltage-controlled oscillator. For high efficiency, a common-source topology with a drain-to-gate neutralization technique is chosen for the DA. A detailed mathematical design methodology is derived for the neutralization technique. The bulk-driven OOK modulator employs a novel dual feedthrough cancellation technique, resulting in a 30-dB on-off ratio. Fabricated in a 65-nm bulk CMOS process, the TX consumes only 19 mW from a 1-V supply, and occupies an active area of 0.077 mm(2). A maximum modulation data rate of 16 Gb/s with 0.75-dBm output power is demonstrated through measurements, which translates to a bit-energy efficiency of 1.2 pJ/bit.
引用
收藏
页码:2357 / 2369
页数:13
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