Influence of SRO top electrode on fatigue characteristics of FRAM

被引：2

作者：

Matsuura, O ^{[1
]}

Kurasawa, M ^{[1
]}

Umemiya, S ^{[1
]}

Maruyama, K ^{[1
]}

Kurihara, K ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

ELECTROCERAMICS IN JAPAN VII | 2004年 / 269卷

关键词：

FRAM; MOCVD; PZT; SRO; fatigue;

D O I：

10.4028/www.scientific.net/KEM.269.69

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Fatigue characteristics were investigated in PZT capacitors using both Pt/SRO top electrodes and IrO2 top electrodes. Fatigue of PZT capacitors with IrO2 top electrode showed degradation with a 600 degreesC annealing processes. We assumed that this degradation was caused by the difference in location within the capacitors where defects were located. It is proposed that the capacitors with Pt/SRO top electrode, the defects existed at the interface between Pt and SRO from SIMS analysis. In the capacitor with IrO2 top electrode, on the other hand, the defects existed at the interface between IrO2 and PZT. Fatigue characteristics of PZT capacitors with SRO top electrode showed superiority to those with IrO2 top electrode, because it wasn't attributed to defects located at the within the top electrode.

引用

页码：69 / 72

页数：4

共 4 条

[1] Characterization of PZT capacitors with SrRuO3 electrodes [J].