The effect of treatment condition on boost diffusion of thermally oxidised titanium alloy

被引:31
作者
Zhang, Zhen Xue
Dong, Hanshan
Bell, Thomas
Xu, Binshi
机构
[1] Univ Birmingham, Dept Met & Mat, Birmingham B15 2TT, W Midlands, England
[2] Natl Key Lab Remfg, Beijing 100072, Peoples R China
基金
英国工程与自然科学研究理事会;
关键词
thermal oxidation; boost diffusion; Ti6Al4V;
D O I
10.1016/j.jallcom.2006.05.045
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A two-step oxygen boost diffusion process has been developed to produce deep hard case on titanium alloys. The dissociation process of the oxide layer in the boost diffusion was investigated in detail. The process parameters have been optimised to tailor the oxygen profile to fit the engineering requirements. Metallographic, X-ray diffraction examinations as well as mechanical testing were performed to evaluate the boost diffused treated samples. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:93 / 99
页数:7
相关论文
共 15 条
[1]  
[Anonymous], 1981, INTRO METALLURGICAL
[2]  
Bertrand G., 1983, OXIDATION MET, V21, P1045
[3]  
BROUMAS AP, 2003, P 2003 AM SOC ENG ED
[4]   Plasma-sprayed hydroxyapatite coating on titanium alloy with ZrO2 second phase and ZrO2 intermediate layer [J].
Chou, BY ;
Chang, E .
SURFACE & COATINGS TECHNOLOGY, 2002, 153 (01) :84-92
[5]   Oxygen boost diffusion for the deep-case hardening of titanium alloys [J].
Dong, H ;
Li, XY .
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2000, 280 (02) :303-310
[6]   Enhanced wear resistance of titanium surfaces by a new thermal oxidation treatment [J].
Dong, H ;
Bell, T .
WEAR, 2000, 238 (02) :131-137
[7]  
EVANS HE, 1995, INT MATER REV, V40, P1, DOI 10.1179/095066095790151124
[8]  
Hauffe K., 1965, OXID MET
[9]   Surface perspective on self-diffusion in rutile TiO2 [J].
Henderson, MA .
SURFACE SCIENCE, 1999, 419 (2-3) :174-187
[10]   Wear resistance of plasma immersion ion implanted Ti6Al4V [J].
Johns, SM ;
Bell, T ;
Samandi, M ;
Collins, GA .
SURFACE & COATINGS TECHNOLOGY, 1996, 85 (1-2) :7-14