Strained Si layers at dielectric/Si(100) interface probed by X-ray photoelectron spectroscopy

被引：0

作者：

Lu, ZH ^{[1
]}

Ma, Y ^{[1
]}

Li, F ^{[1
]}

Liu, CT ^{[1
]}

机构：

[1] Univ Toronto, Dept Met & Mat Sci, Toronto, ON M5S 3E4, Canada

来源：

PHYSICS AND CHEMISTRY OF SIO2 AND THE SI-SIO2 INTERFACE - 4 | 2000年 / 2000卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The interface microstructural properties of various gate oxides/silicon interfaces have been studied by Si 2p core level X-ray photoelectron spectroscopy. The data show that some dielectric/Si interfaces exhibit spectral feature representing a new species with a chemical shift of 0.3 eV. This new species, amounted to similar to 4x10(14) cm(-2), is explained as due to strained substrate silicon atoms near the interface. The existence of this strained silicon species coincides with poor charge-to-breakdown electrical characteristics observed on this type of samples. The results suggest that the interface electrical characteristics are directly related to the interface microstructures.

引用

页码：453 / 457

页数：3

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