The Creation of True Two-Dimensional Silicon Carbide

被引:71
作者
Chabi, Sakineh [1 ]
Guler, Zeynel [1 ]
Brearley, Adrian J. [2 ]
Benavidez, Angelica D. [3 ]
Luk, Ting Shan [4 ]
机构
[1] Univ New Mexico, Dept Mech Engn, Albuquerque, NM 87131 USA
[2] Univ New Mexico, Dept Earth & Planetary Sci, Albuquerque, NM 87131 USA
[3] Univ New Mexico, Ctr Microengn Mat, Dept Chem & Biol Engn, Albuquerque, NM 87131 USA
[4] Sandia Natl Labs, Ctr Integrated Nanotechnol, Albuquerque, NM 87123 USA
关键词
two-dimensional materials; silicon carbide; siligraphene; semiconductors; graphene; CARBON; GERMANENE; BOND;
D O I
10.3390/nano11071799
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp(3) hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.
引用
收藏
页数:10
相关论文
共 51 条
[1]   First principles many-body calculations of electronic structure and optical properties of SiC nanoribbons [J].
Alaal, Naresh ;
Loganathan, Vaideesh ;
Medhekar, Nikhil ;
Shukla, Alok .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (10)
[2]   Strong second harmonic generation in SiC, ZnO, GaN two-dimensional hexagonal crystals from first-principles many-body calculations [J].
Attaccalite, C. ;
Nguer, A. ;
Cannuccia, E. ;
Gruening, M. .
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (14) :9533-9540
[3]   First-principles study of defects and adatoms in silicon carbide honeycomb structures [J].
Bekaroglu, E. ;
Topsakal, M. ;
Cahangirov, S. ;
Ciraci, S. .
PHYSICAL REVIEW B, 2010, 81 (07)
[4]   COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].
BHATNAGAR, M ;
BALIGA, BJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655
[5]   STABLE SOLID SILAETHYLENES [J].
BROOK, AG ;
NYBURG, SC ;
ABDESAKEN, F ;
GUTEKUNST, B ;
GUTEKUNST, G ;
KALLURY, RKMR ;
POON, YC ;
CHANG, YM ;
WONGNG, W .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1982, 104 (21) :5667-5672
[6]   Photoluminescent two-dimensional SiC quantum dots for cellular imaging and transport [J].
Cao, Yu ;
Dong, Haifeng ;
Pu, Shaotao ;
Zhang, Xueji .
NANO RESEARCH, 2018, 11 (08) :4074-4081
[7]  
Castelletto S, 2014, NAT MATER, V13, P151, DOI [10.1038/NMAT3806, 10.1038/nmat3806]
[8]   Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor [J].
Chabi, Sakineh ;
Kadel, Kushal .
NANOMATERIALS, 2020, 10 (11) :1-20
[9]   Ultralight, Strong, Three-Dimensional SiC Structures [J].
Chabi, Sakineh ;
Rocha, Victoria G. ;
Garcia-Tunon, Esther ;
Ferraro, Claudio ;
Saiz, Eduardo ;
Xia, Yongde ;
Zhu, Yanqiu .
ACS NANO, 2016, 10 (02) :1871-1876
[10]   From graphene to silicon carbide: ultrathin silicon carbide flakes [J].
Chabi, Sakineh ;
Chang, Hong ;
Xia, Yongde ;
Zhu, Yanqiu .
NANOTECHNOLOGY, 2016, 27 (07)