A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section

被引：5

作者：

De Michielis, L. ^{[1
]}

Selmi, L. ^{[2
]}

Ionescu, A. M. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Nanoelect Devices Lab Nanolab, CH-1015 Lausanne, Switzerland

[2] Univ Udine, Dept Elect Managerial & Mech Engn, I-33100 Udine, Italy

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 09期

关键词：

Silicon nanowire; Multi-gate MOSFET; Short-channel-effects; FABRICATION; SILICON; MOSFETS;

D O I：

10.1016/j.sse.2010.04.039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work a quasi-analytical physical model has been developed for the prediction of the potential in SiNW devices with arbitrary polygonal cross section. The model is then extended to the transport direction; a method for the calculation of the natural channel length has been proposed and validated by means of 2D and 3D numerical device simulations. With the results based on the proposed model it is possible to compare nanowires with cross sections of different shape and predict the minimum technological gate length able to assure immunity to the SCEs. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：929 / 934

页数：6

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