Microalloying Boron Carbide with Silicon to Achieve Dramatically Improved Ductility

被引:50
作者
An, Qi [1 ]
Goddard, William A., III [1 ]
机构
[1] CALTECH, Mat & Proc Simulat Ctr Mail Code 139 74, Pasadena, CA 91125 USA
关键词
TOTAL-ENERGY CALCULATIONS; MECHANICAL-PROPERTIES; ELECTRON LOCALIZATION; RAMAN-SPECTROSCOPY; PHASE-TRANSITIONS; TOUGHNESS; BEHAVIOR; CLUSTER; METALS;
D O I
10.1021/jz5022697
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Boron carbide (B4C) is a hard material whose value for extended engineering applications such as body armor; is limited by its brittleness under impact. To improve the ductility while retaining hardness, we used density functional theory to examine modifying B4C ductility through microalloying. We found that replacing the CBC chain in B4C with Si-Si, denoted as (B11Cp)-Si-2, dramatically improves the ductility, allowing a continuous shear to a large strain of 0.802 (about twice of B4C failure strain) without brittle failure. Moreover, (B11C)-Si-2 retains low density and high hardness. This ductility improvement arises because the Si-Si linkages enable the icosahedra accommodate additional shear by rotating instead of breaking bonds.
引用
收藏
页码:4169 / 4174
页数:6
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