Low frequency noise studies in SWIR HgCdTe photodiodes

In this paper, low frequency noise has been investigated in SWIR HgCdTe photodiodes from 4Hz to 3.2 KHz at different reverse bias. At low frequency the noise mainly consists of flicker noise and generation recombination (g-r) noise while at high frequency thermal noise is the dominant component. The flicker noise current is proportional to the detector current at small reverse bias, and the Hooge parameter (alpha(H) of the device is evaluated. In addition, the low frequency noise at 100mV reverse bias measured from 250-300K are reported. The fluctuation time constant tau of g-r noise is extracted by fitting the curve of the low frequency noise, and the trap thermal activation energy of the deep level is obtained from the relation of rand temperature.