Tuning of the Optical, Electronic, and Magnetic Properties of Boron Nitride Nanosheets with Oxygen Doping and Functionalization

被引：209

作者：

Weng, Qunhong ^{[1
]}

Kvashnin, Dmitry G. ^{[2
]}

Wang, Xi ^{[3
]}

Cretu, Ovidiu ^{[1
]}

Yang, Yijun ^{[3
]}

Zhou, Min ^{[1
]}

Zhang, Chao ^{[1
,4
]}

Tang, Dai-Ming ^{[1
]}

Sorokin, Pavel B. ^{[2
,5
]}

Bando, Yoshio ^{[1
]}

Golberg, Dmitri ^{[1
,4
]}

机构：

[1] NIMS, Int Ctr Mat Nanoarchitecton MANA, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Univ Sci & Technol MISIS, Leninskiy Prospekt 4, Moscow 119049, Russia

[3] Beijing Jiaotong Univ, Sch Sci, Beijing 100044, Peoples R China

[4] Queensland Univ Technol, Fac Sci & Engn, 2 George St, Brisbane, Qld 4000, Australia

[5] Technol Inst Superhard & Novel Carbon Mat Troitsk, Cent Naya St 7a, Moscow 108840, Russia

来源：

ADVANCED MATERIALS | 2017年 / 29卷 / 28期

基金：

澳大利亚研究理事会;

关键词：

bandgap; boron nitride; magnetic; nanosheets; oxygen; LUMINESCENCE PROPERTIES; RADIATIVE TRANSITIONS; STRUCTURAL-PROPERTIES; BN NANOTUBES; CARBON; GRAPHENE; SHEETS; FILMS;

D O I：

10.1002/adma.201700695

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Engineering of the optical, electronic, and magnetic properties of hexagonal boron nitride (h-BN) nanomaterials via oxygen doping and functionalization has been envisaged in theory. However, it is still unclear as to what extent these properties can be altered using such methodology because of the lack of significant experimental progress and systematic theoretical investigations. Therefore, here, comprehensive theoretical predictions verified by solid experimental confirmations are provided, which unambiguously answer this long-standing question. Narrowing of the optical bandgap in h-BN nanosheets (from approximate to 5.5 eV down to 2.1 eV) and the appearance of paramagnetism and photoluminescence (of both Stokes and anti-Stokes types) in them after oxygen doping and functionalization are discussed. These results are highly valuable for further advances in semiconducting nanoscale electronics, optoelectronics, and spintronics.

引用

页数：8

共 40 条

[1] Band gap engineering by functionalization of BN sheet [J].

Bhattacharya, A. ;

Bhattacharya, S. ;

Das, G. P. .

PHYSICAL REVIEW B, 2012, 85 (03)

[2] QUASI-PARTICLE BAND-STRUCTURE OF BULK HEXAGONAL BORON-NITRIDE AND RELATED SYSTEMS [J].

BLASE, X ;

RUBIO, A ;

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1995, 51 (11) :6868-6875

[3]

Chhowalla M, 2013, NAT CHEM, V5, P263, DOI [10.1038/nchem.1589, 10.1038/NCHEM.1589]

[4]

Ci L, 2010, NAT MATER, V9, P430, DOI [10.1038/nmat2711, 10.1038/NMAT2711]

[5] Controlled surface modification of boron nitride nanotubes [J].

Dai, Xiujuan J. ;

Chen, Ying ;

Chen, Zhiqiang ;

Lamb, Peter R. ;

Li, Lu H. ;

du Plessis, Johan ;

McCulloch, Dougal G. ;

Wang, Xungai .

NANOTECHNOLOGY, 2011, 22 (24)

[6] Electronic and structural properties of oxygen-doped BN nanotubes [J].

de Andrade Silva, Leandro ;

Coradi Guerini, Silvete ;

Lemos, Volfa ;

Mendes Filho, Josu .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (05) :517-522

[7] The Nature of Radiative Transitions in O-Doped Boron Nitride Nanotubes [J].

Gou, Gaoyang ;

Pan, Bicai ;

Shi, Lei .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (13) :4839-4845

[8] CHARACTERIZATION OF THE NITRIDATION PROCESS OF BORIC-ACID [J].

GOUIN, X ;

GRANGE, P ;

BOIS, L ;

LHARIDON, P ;

LAURENT, Y .

JOURNAL OF ALLOYS AND COMPOUNDS, 1995, 224 (01) :22-28

[9] Isotope effect on band gap and radiative transitions properties of boron nitride nanotubes [J].

Han, Wei-Qiang ;

Yu, Hua-Gen ;

Zhi, Chunyi ;

Wang, Jianbin ;

Liu, Zhenxian ;

Sekiguchi, Takashi ;

Bando, Yoshio .

NANO LETTERS, 2008, 8 (02) :491-494

[10] Structure and luminescence properties of 10-BN sheets [J].

Han, Wei-Qiang ;

Liu, Lijia ;

Sham, T. K. ;

Liu, Zhenxian .

NANOSCALE, 2012, 4 (22) :6951-6954

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