Compositionally tunable ternary Bi2(Se1-xTex)3 and (Bi1-ySby)2Te3 thin films via low pressure chemical vapour deposition

被引:15
作者
Benjamin, Sophie L. [1 ,2 ]
de Groot, C. H. [3 ]
Gurnani, Chitra [1 ,4 ]
Hawken, Samantha L. [1 ]
Hector, Andrew L. [1 ]
Huang, Ruomeng [3 ]
Jura, Marek [5 ]
Levason, William [1 ]
Reid, Eleanor [1 ]
Reid, Gillian [1 ]
Richards, Stephen P. [1 ]
Stenning, Gavin B. G. [5 ]
机构
[1] Univ Southampton, Chem, Southampton SO17 1BJ, Hants, England
[2] Nottingham Trent Univ, Sch Sci & Technol, Nottingham NG11 8NS, England
[3] Univ Southampton, Elect & Comp Sci, Southampton SO17 1BJ, Hants, England
[4] Mahindra Ecole Cent, Sch Nat Sci, Hyderabad, India
[5] Rutherford Appleton Lab, ISIS Neutron & Muon Source, Harwell Sci & Innovat Campus, Didcot OX11 0QX, Oxon, England
基金
英国工程与自然科学研究理事会;
关键词
SINGLE-SOURCE PRECURSOR; ANTIMONY(III) HALIDE-COMPLEXES; THERMOELECTRIC PROPERTIES; PHYSICAL-PROPERTIES; BISMUTH TELLURIDE; SOLAR-CELLS; SB2TE3; BI2TE3; GROWTH; SB2SE3;
D O I
10.1039/c8tc01285g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The inherently rapid ligand substitution kinetics associated with the novel and chemically compatible precursors, [MCl3((EBu2)-Bu-n)(3)] (M = Sb, Bi; E = Se, Te), enable CVD growth of ternary Bi-2(Se1-xTex)(3) and (Bi1-ySby)(2) Te-3 thin films with very good compositional, structural and morphological control, for the first time. X-ray diffraction data follow Vegard's law and Raman bands shift linearly with the atom substitutions, indicating very well-distributed solid solutions.
引用
收藏
页码:7734 / 7739
页数:6
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