CdTe X-ray detectors under strong optical irradiation

被引：18

作者：

Cola, Adriano ^{[1
]}

Farella, Isabella ^{[1
]}

机构：

[1] CNR, IMM, Unit Lecce, I-73100 Lecce, Italy

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 20期

关键词：

CHARGE-LIMITED CURRENTS; ELECTRIC-FIELD;

D O I：

10.1063/1.4902188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The perturbation behaviour of Ohmic and Schottky CdTe detectors under strong optical pulses is investigated. To this scope, the electric field profiles and the induced charge transients are measured, thus simultaneously addressing fixed and free charges properties, interrelated by one-carrier trapping. The results elucidate the different roles of the contacts and deep levels, both under dark and strong irradiation conditions, and pave the way for the improvement of detector performance control under high X-ray fluxes. (C) 2014 AIP Publishing LLC.

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页数：4

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