The Development of Microstructure and Ferroelectric Properties of Bi4Ti3.96Nb0.04O12 Thin Films

被引：1

作者：

Chen, H. Z. ^{[1
]}

Kao, M. C. ^{[1
]}

Young, S. L. ^{[1
]}

Yu, C. C. ^{[1
]}

Lin, C. H. ^{[2
]}

Ou, C. R. ^{[2
]}

Lee, C. M. ^{[2
]}

机构：

[1] Hsiuping Inst Technol, Dept Elect Engn, Taichung 412, Taiwan

[2] Hsiuping Inst Technol, Dept Elect Engn, Taichung Cty, Taiwan

来源：

JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM | 2010年 / 23卷 / 06期

关键词：

Sol-gel process; Bismuth titanate; Oxygen vacancy; Ferroelectric; Leakage current; SOL-GEL METHOD; BLT;

D O I：

10.1007/s10948-010-0697-9

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi4Ti3.96Nb0.04O12 thin films were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by a sol-gel method and rapid thermal annealing. The effects of Nb-substitution and annealing temperature (500-800A degrees C) on the microstructure and ferroelectric properties of bismuth titanate thin films were investigated. X-ray diffraction analysis reveals that the intensities of (117) peaks are relatively broad and weak at annealing temperatures smaller than 700A degrees C. With the increase of annealing temperature from 500A degrees C to 800A degrees C, the grain size of Bi4Ti3.96Nb0.04O12 thin films increases. The Bi4Ti3.96Nb0.04O12 thin films annealed at 700A degrees C exhibit the highest remanent polarization (2P (r)), 36 mu C/cm(2) and lowest coercive field (2E (c)), 110 kV/cm. The improved ferroelectric properties can be attributed to the substitution of Nb5+ to Ti4+ in Bi4Ti3O12 assisting the elimination of defects such as oxygen vacancy and vacancy complexes.

引用

页码：933 / 935

页数：3

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