Thin-film III-V photodetectors integrated on silicon-on-insulator photonic ICs

被引：64

作者：

Brouckaert, Joost ^{[1
]}

Roelkens, Gunther ^{[1
]}

Van Thourhout, Dries ^{[1
]}

Baets, Roel ^{[1
]}

机构：

[1] Univ Ghent, Interuniv Microelect Ctr, Dept Informat Technol, B-9000 Ghent, Belgium

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 2007年 / 25卷 / 04期

关键词：

heterogeneous integration; photonic integrated circuit (IC); silicon-on-insulator (SOI); thin-film photodetectors;

D O I：

10.1109/JLT.2007.891172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We critically assess recent progress in the integration of near-infrared photodetectors onto nanophotonic silicon-on-insulator (SOI) waveguide circuits. Integration of thin-film InGaAs photodetectors is studied in detail. This method consists of bonding unprocessed III-V dies onto the SOI substrate using an intermediate adhesive layer. Both benzocyclobutene and spin-on glass are studied and compared as bonding agents. After the removal of the III-V substrate, the thin-film detectors are fabricated using wafer-scale-compatible processes and lithographically aligned to the underlying SOI waveguides. The process is compatible with the fabrication of InP/InGaAsP laser diodes on SOL A new design of an evanescently coupled metal-semiconductor-metal detector is proposed, proving,the ability to obtain compact and highly efficient integrated InGaAs photodetectors.

引用

页码：1053 / 1060

页数：8

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