Evaluation of effective electron velocity in AlGaN/GaN HEMTs

被引：35

作者：

Akita, M ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 20期

关键词：

D O I：

10.1049/el:20001193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have fabricated a 1.3 mu m-long gate AlGaN/GaN HEMT with f(T) of 14.1GHz, corresponding to a high f(T) x gate-length product of 18.3GHz mu m. By analysing the relationship between the delay time and the inverse of the drain current, the effective electron velocity in the channel was evaluated to be as high as 1.2 x 10(7) cm/s.

引用

页码：1736 / 1737

页数：2

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