Coherent tunneling and giant tunneling magnetoresistance in Co2FeAl/MgO/CoFe magnetic tunneling junctions

被引：129

作者：

Wang, Wenhong ^{[1
,2
]}

Liu, Enke ^{[2
]}

Kodzuka, Masaya ^{[1
,3
]}

Sukegawa, Hiroaki ^{[1
]}

Wojcik, Marec ^{[4
]}

Jedryka, Eva ^{[4
]}

Wu, G. H. ^{[2
]}

Inomata, Koichiro ^{[1
]}

Mitani, Seiji ^{[1
]}

Hono, Kazuhiro ^{[1
,3
]}

机构：

[1] Natl Inst Mat Sci, Magnet Mat Ctr, Tsukuba, Ibaraki 3050047, Japan

[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3050047, Japan

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 14期

关键词：

ROOM-TEMPERATURE;

D O I：

10.1103/PhysRevB.81.140402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-dependent coherent tunneling has been experimentally observed in high-quality sputtered-deposited Co2FeAl/MgO/CoFe epitaxial magnetic tunneling junctions (MTJs). Consequently, the microfabricated MTJs manifest a very large tunnel magnetoresistance (TMR) at room temperature and an unexpectedly TMR oscillation as a function of MgO barrier thickness. First-principles electronic band calculations confirm the pronounced coherent tunneling effect and are in good agreement with the experimental data. The present work demonstrates the importance of coherent tunneling for large TMR with Heusler alloys

引用

页数：4

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