Dynamic power supply current testing of CMOS SRAMs

被引:5
作者
Liu, J [1 ]
Makki, RZ
Kayssi, A
机构
[1] Fujitsu Microelect Inc, San Jose, CA 95134 USA
[2] Univ N Carolina, Charlotte, NC 28223 USA
[3] Amer Univ Beirut, Beirut, Lebanon
来源
JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS | 2000年 / 16卷 / 05期
基金
美国国家科学基金会;
关键词
transient power supply current (i(DDT)); transient current sensor; disturb fault; CMOS SRAM;
D O I
10.1023/A:1008324900917
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe the design and implementation of a dynamic power supply current sensor which is used to detect SRAM faults such as disturb faults as well as logic cell faults. A formal study is presented to assess the parameters that influence the sensor design. The sensor detects faults by detecting abnormal levels of the power supply current. The sensor is embedded in the SRAM and offers on-chip detectability of faults. The sensor detects abnormal dynamic current levels that result from circuit defects. If two or more memory cells erroneously switch as a result of a write or read operation, the level of the dynamic power supply current is elevated. The sensor can detect this elevated value of the dynamic current. The dynamic power supply current sensor can supplement the observability associated with any test algorithm by using the sensor as a substitute for the read operations. This significantly reduces the test length and the additional observability enhances defect coverages.
引用
收藏
页码:499 / 511
页数:13
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