Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers

被引：1

作者：

Li, Zhe ^{[1
,2
]}

Zhang, Li-Guo ^{[1
]}

Zhang, Ze-Hong ^{[1
]}

Ju, Tao ^{[1
]}

Zhang, Xuan ^{[1
]}

Zhang, Bao-Shun ^{[1
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2018年 / 53卷 / 09期

关键词：

4H-SiC; cathodoluminescence; epitaxial growth; in-grown stacking faults; photoluminescence; CHEMICAL-VAPOR-DEPOSITION; BASAL-PLANE DISLOCATIONS; SCHOTTKY-BARRIER DIODES; SIC PIN DIODES; EPITAXIAL-GROWTH; DEFECT FORMATION; SPIRAL GROWTH; LAYERS; FACE;

D O I：

10.1002/crat.201700234

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Shockley-type in-grown stacking faults (IGSFs) in 4H-SiC epilayers are studied. Most of the IGSFs are observed to be of triangular shape in the samples. Detailed optical features of two types of IGSFs are revealed by room temperature cathodoluminescence (RTCL) and low-temperature photoluminescence (LTPL). Energy gaps (E-gx) of the two types of IGSFs are deduced to be 2.511 and 2.764eV from their emission wavelengths. They are identified to be of (6, 2) and (4, 4) types, respectively. The nucleation sites and propagation of the IGSFs are tracked by back etching and defect-selective-etching (DSE), and threading screw dislocations (TSDs) are frequently observed at the nucleation sites of the Shockley-type IGSFs. The nucleation mechanism of these IGSFs is discussed, and the TSDs are suggested to be the major sources of the IGSFs.

引用

页数：6

共 50 条

[1] Characterization of major in-grown stacking faults in 4H-SiC epilayers
Feng, Gan
Suda, Jun
Kimoto, Tsunenobu
PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 4745 - 4748
[2] Triple Shockley type stacking faults in 4H-SiC epilayers
Feng, Gan
Suda, Jun
Kimoto, Tsunenobu
APPLIED PHYSICS LETTERS, 2009, 94 (09)
[3] Structural analysis and reduction of in-grown stacking faults in 4H-SiC epilayers
Izumi, S
Tsuchida, H
Kamata, I
Tawara, T
APPLIED PHYSICS LETTERS, 2005, 86 (20) : 1 - 3
[4] Single Shockley Stacking Faults in as-grown 4H-SiC Epilayers
Hassan, J.
Bergman, J. P.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 327 - 330
[5] Optical and Structural Properties of In-grown Stacking Faults in 4H-SiC Epilayers
Hassan, J.
Henry, A.
Bergman, J. P.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 307 - 310
[6] In-grown stacking faults identified in 4H-SiC epilayers grown at high growth rate
Feng, G.
Suda, J.
Kimoto, T.
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 287 - 290
[7] In-grown stacking faults in 4H-SiC epilayers grown on off-cut substrates
Hassan, J.
Henry, A.
Ivanov, I. G.
Bergman, J. P.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (12)
[8] In-grown stacking-faults in 4H-SiC epilayers grown on 2° off-cut substrates
Lilja, Louise
Ul Hassan, Jawad
Janzen, Erik
Bergman, J. Peder
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (06): : 1319 - 1324
[9] Impacts of single Shockley-type stacking faults on current conduction in 4H-SiC PiN diodes
Asada, Satoshi
Murata, Koichi
Tsuchida, Hidekazu
JOURNAL OF APPLIED PHYSICS, 2024, 136 (17)
[10] Structure of in-grown stacking faults in the 4H-SiC epitaxial layers
Izumi, S
Tsuchida, H
Tawara, T
Kamata, I
Izumi, K
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 323 - 326

← 1 2 3 4 5 →