Submonolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor

被引：48
作者：
Xu, ZC [1 ]
Birkedal, D
Juhl, M
Hvam, JM
机构：
[1] Nankai Univ, Key Lab Adv Tech & Fabricat Weak Light Nonlinear, Minist Educ, Tianjin 300071, Peoples R China
[2] Tech Univ Denmark, Res Ctr COM, DK-2800 Lyngby, Denmark
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 15期
关键词：
D O I：
10.1063/1.1806564
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The gain spectra of a submonolayer (SML) InGaAs/GaAs quantum dot (QD) laser working at 30degreesC were measured using the Hakki-Paoli method. It is found that the maximum modal gain of QD ground states is as high as 44 cm(-1) and no gain saturation occurs below the threshold at the lasing wavelength of 964.1 nm. When the injection current is about 0.98 times the threshold, the gain spectrum becomes symmetric with respect to the lasing wavelength, and zero-linewidth enhancement factor is observed. These properties are attributed to the high density and the high uniformity of SML QDs in our laser diode. (C) 2004 American Institute of Physics.
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页码：3259 / 3261
页数：3
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