Development of a new silicon drift detector module

被引：0
|
作者：
Welter, Edmund [1 ]
Hansen, Karsten [2 ]
机构：
[1] Deutsch Elektron Synchrotron, Hamburger Synchrotron Strahlungslabor, Notkestr 85, D-22607 Hamburg, Germany
[2] Deutschen Elektronen Synchrotron, D-22607 Hamburg, Germany
来源：
X-RAY ABSORPTION FINE STRUCTURE-XAFS13 | 2007年 / 882卷
关键词：
silicon drift diodes; fl-XAFS; detector development;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A novel 7 cell Silicon Drift Detector (SDD) module for X-Ray Absorption Fine Structure Spectroscopy (XAFS) and similar methods is developed at the Hamburger Synchrotron Strahlungslabor at Deutsches Elektronen Synchrotron. The monolithic 7 cell SDD detector chips were delivered by PN Sensors (Munich, Germany). Each cell has an active area of 7 mm(2). In this paper we report results from the spatially resolved spectroscopic characterization of the SDD and their consequences for the final design of the complete detector modules. A specialized read out chip is currently developed at DESY and will make it possible to achieve a maximum count rate of 600 Kcps/detector cell.
引用
收藏
页码：917 / +
页数：2
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