The effect of temperature on resistive ZnO layers and the performance of thin film CdTe solar cells

被引：18
|
作者：
Bittau, F. [1 ]
Abbas, A. [1 ]
Barth, K. L. [2 ]
Bowers, J. W. [1 ]
Walls, J. M. [1 ]
机构：
[1] Loughborough Univ Technol, Wolfson Sch Mech Elect & Mfg Engn, CREST, Loughborough LE11 3TU, Leics, England
[2] Colorado State Univ, NSF I UCRC Next Generat Photovolta, Ft Collins, CO 80523 USA
来源：
THIN SOLID FILMS | 2017年 / 633卷
基金：
英国工程与自然科学研究理事会;
关键词：
Cadmium telluride; Zinc oxide; Thin films; Electrical resistivity; Solar cells; BUFFER LAYERS;
D O I：
10.1016/j.tsf.2016.10.068
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The use of a highly resistive transparent (HRT) layer has been shown to increase the efficiency of thin film CdTe heterostructure solar cells incorporating a thin CdS layer. In this study ZnO HRT layers were deposited at different substrate temperatures on soda lime glass and on fluorine-doped tin oxide-coated glass to enable structural, optical and electrical characterization. The performance of equivalent films was tested within CdS/CdTe solar cells. The ZnO thickness was limited to 150 nm, whilst the substrate temperature was varied from 20 degrees C to 400 degrees C during deposition. X-ray diffraction patterns and transmission electron microscopy of the cross-sectional microstructure of completed devices showed that the growth of the ZnO is improved when the films are deposited at higher temperatures. Film resistivity was lowest at 100 degrees C and highest at 400 degrees C, ranging from 10(-2) Omega.cm to 033 Omega.cm. The high temperature deposited ZnO exhibits improved micro-structural growth and an improvement in device efficiency. (C) 2016 The Authors. Published by Elsevier B.V.
引用
收藏
页码：92 / 96
页数：5
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