The effect of temperature on resistive ZnO layers and the performance of thin film CdTe solar cells

被引：18

作者：

Bittau, F. ^{[1
]}

Abbas, A. ^{[1
]}

Barth, K. L. ^{[2
]}

Bowers, J. W. ^{[1
]}

Walls, J. M. ^{[1
]}

机构：

[1] Loughborough Univ Technol, Wolfson Sch Mech Elect & Mfg Engn, CREST, Loughborough LE11 3TU, Leics, England

[2] Colorado State Univ, NSF I UCRC Next Generat Photovolta, Ft Collins, CO 80523 USA

来源：

THIN SOLID FILMS | 2017年 / 633卷

基金：

英国工程与自然科学研究理事会;

关键词：

Cadmium telluride; Zinc oxide; Thin films; Electrical resistivity; Solar cells; BUFFER LAYERS;

D O I：

10.1016/j.tsf.2016.10.068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of a highly resistive transparent (HRT) layer has been shown to increase the efficiency of thin film CdTe heterostructure solar cells incorporating a thin CdS layer. In this study ZnO HRT layers were deposited at different substrate temperatures on soda lime glass and on fluorine-doped tin oxide-coated glass to enable structural, optical and electrical characterization. The performance of equivalent films was tested within CdS/CdTe solar cells. The ZnO thickness was limited to 150 nm, whilst the substrate temperature was varied from 20 degrees C to 400 degrees C during deposition. X-ray diffraction patterns and transmission electron microscopy of the cross-sectional microstructure of completed devices showed that the growth of the ZnO is improved when the films are deposited at higher temperatures. Film resistivity was lowest at 100 degrees C and highest at 400 degrees C, ranging from 10(-2) Omega.cm to 033 Omega.cm. The high temperature deposited ZnO exhibits improved micro-structural growth and an improvement in device efficiency. (C) 2016 The Authors. Published by Elsevier B.V.

引用

页码：92 / 96

页数：5

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