Mechanistic studies of silicon wafer bonding and layer exfoliation

被引：0

作者：

Weldon, MK ^{[1
]}

Marsico, VE ^{[1
]}

Chabal, YJ ^{[1
]}

Agarwal, A ^{[1
]}

Eaglesham, DJ ^{[1
]}

Sapjeta, J ^{[1
]}

Brown, WL ^{[1
]}

Jacobson, DC ^{[1
]}

Caudano, Y ^{[1
]}

Christman, SB ^{[1
]}

Chaban, EE ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS IV | 1998年 / 36卷

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Infrared absorption spectroscopy is used with other scattering and imaging techniques to elucidate the interface reactions leading to permanent chemical bonding of joined hydrophilic wafers upon annealing, and to uncover the thermal evolution of H-decorated defects in H-implanted Si wafers. Detailed mechanisms are proposed whereby the role of microvoids as gettering sites for H-2 is highlighted and the kinetic interplay between defect formation/evolution, H passivation of internal structures and molecular H-2 formation is shown to be critical for exfoliation to occur.

引用

页码：229 / 248

页数：20