EVALUATION OF THE PIEZORESISTIVE AND ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON-GERMANIUM FOR MEMS SENSOR APPLICATIONS

被引：6
|
作者：
Gonzalez, Pilar [1 ]
Haspeslagh, Luc [1 ]
De Meyer, Kristin [1 ]
Witvrouw, Ann [1 ]
机构：
[1] Interuniv Microelect Ctr, Louvain, Belgium
来源：
MEMS 2010: 23RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2010年
关键词：
D O I：
10.1109/MEMSYS.2010.5442437
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports for the first time the experimentally evaluated piezoresistive properties of boron-doped poly-SiGe for different doping doses (from 2.10(13) cm(-2) to 4.10(15) cm(-2)) and germanium content (49% and 64%). The resistivity and temperature coefficient of resistance are also studied. Results show that with proper tuning of the boron and germanium content, a gauge factor over 20 and a TCR as low as 0 are achievable. Finally, finite-element simulations of a possible application to a pressure sensor lead to sensitivities above 40 mV/V/bar, highlighting the potential of this material for MEMS piezoresistive sensor applications.
引用
收藏
页码：580 / 583
页数：4
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