EVALUATION OF THE PIEZORESISTIVE AND ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON-GERMANIUM FOR MEMS SENSOR APPLICATIONS

被引：6

作者：

Gonzalez, Pilar ^{[1
]}

Haspeslagh, Luc ^{[1
]}

De Meyer, Kristin ^{[1
]}

Witvrouw, Ann ^{[1
]}

机构：

[1] Interuniv Microelect Ctr, Louvain, Belgium

来源：

MEMS 2010: 23RD IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST | 2010年

关键词：

D O I：

10.1109/MEMSYS.2010.5442437

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports for the first time the experimentally evaluated piezoresistive properties of boron-doped poly-SiGe for different doping doses (from 2.10(13) cm(-2) to 4.10(15) cm(-2)) and germanium content (49% and 64%). The resistivity and temperature coefficient of resistance are also studied. Results show that with proper tuning of the boron and germanium content, a gauge factor over 20 and a TCR as low as 0 are achievable. Finally, finite-element simulations of a possible application to a pressure sensor lead to sensitivities above 40 mV/V/bar, highlighting the potential of this material for MEMS piezoresistive sensor applications.

引用

页码：580 / 583

页数：4

共 14 条

[1] RESISTIVITY OF BORON AND PHOSPHORUS-DOPED POLYCRYSTALLINE SI1-XGEX FILMS [J].