2D CRYSTAL SEMICONDUCTORS Intimate contacts

被引：121

作者：

Jena, Debdeep ^{[1
,2
,3
]}

Banerjee, Kaustav ^{[4
]}

Xing, Grace Huili ^{[1
,2
,3
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA

[2] Cornell Univ, Dept Elect & Comp Engn, New York, NY 14853 USA

[3] Cornell Univ, Dept Mat Sci & Engn, New York, NY 14853 USA

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

NATURE MATERIALS | 2014年 / 13卷 / 12期

关键词：

MOS2; TRANSISTORS;

D O I：

10.1038/nmat4121

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

High electrical contact resistance had stalled the promised performance of two-dimensional layered devices. Low-resistance metal–semiconductor contacts are now obtained by interfacing semiconducting MoS2 layers with the metallic phase of this material.

引用

页码：1076 / 1078

页数：4

共 10 条

[1]

[Anonymous], 1904, NATURE

[2] The silicon MOSFET from a transmission viewpoint [J].

Datta, S ;

Assad, F ;

Lundstrom, MS .

SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (3-4) :771-780

[3]

Kappera R, 2014, NAT MATER, V13, P1128, DOI [10.1038/nmat4080, 10.1038/NMAT4080]

[4] SPATIAL VARIATION OF CURRENTS AND FIELDS DUE TO LOCALIZED SCATTERERS IN METALLIC CONDUCTION [J].

LANDAUER, R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1957, 1 (03) :223-231

[5]

Lin YC, 2014, NAT NANOTECHNOL, V9, P391, DOI [10.1038/NNANO.2014.64, 10.1038/nnano.2014.64]

[6] Full band calculations of the intrinsic lower limit of contact resistivity [J].

Maassen, J. ;

Jeong, C. ;

Baraskar, A. ;

Rodwell, M. ;

Lundstrom, M. .

APPLIED PHYSICS LETTERS, 2013, 102 (11)

[7] Single-layer MoS2 transistors [J].

Radisavljevic, B. ;

Radenovic, A. ;

Brivio, J. ;

Giacometti, V. ;

Kis, A. .

NATURE NANOTECHNOLOGY, 2011, 6 (03) :147-150

[8]

SHARVIN YV, 1965, SOV PHYS JETP-USSR, V21, P655

[9] QUANTIZED CONDUCTANCE OF POINT CONTACTS IN A TWO-DIMENSIONAL ELECTRON-GAS [J].

VANWEES, BJ ;

VANHOUTEN, H ;

BEENAKKER, CWJ ;

WILLIAMSON, JG ;

KOUWENHOVEN, LP ;

VANDERMAREL, D ;

FOXON, CT .

PHYSICAL REVIEW LETTERS, 1988, 60 (09) :848-850

[10]

Yang L., 2014, VLSI S, P238

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